Total: 7
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
stop production
MOSFET(Metal oxide)
SiCFET(silicon carbide)
SiC(Silicon carbide bonded crystal tube)
N channels
±20V
+25V,-10V
+23V,-10V
-
283W(Tc)