Total: 71
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
Final sale
stop production
Not applicable to new design
MOSFET(Metal oxide)
SiCFET(silicon carbide)
N channels
±20V
+25V,-10V
±30V
±25V
+22V,-10V
+20V,-5V
-
208W(Tc)