Total: 87
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
Final sale
stop production
Not applicable to new design
MOSFET(Metal oxide)
SiCFET(silicon carbide)
P channels
N channels
±20V
±30V
+23V,-10V
±25V
±12V
±16V
-
63W(Tc)