Total: 73
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
stop production
Not applicable to new design
MOSFET(Metal oxide)
P channels
N channels
±20V
±10V
±25V
±12V
±8V
±50V
-
Schottky diode (isolated)
900mW(Ta)