APT5020BN parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

APT5020BN

Description:

MOSFET N-CH 500V 28A TO247AD

Stock:

98927

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

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Parameters

Current at 25 ° C - continuous drain (Id)

28A(Tc)

Drain source voltage (Vdss)

500 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

210 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

3500 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

200 mΩ @ 14A,10V

Power dissipation (maximum)

360W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

4V @ 1mA

packing

pipe

series

POWER MOS IV®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

TO-247AD

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

stop production

DataSheet

APT5020BN（MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory98927,Price reference "real-time change" China/Hongkong。 APT5020BN package/specs, Download APT5020BN、Datasheet。

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MOSFET N-CH 500V 28A TO247AD APT5020BN