MOSFET N-CH 525V 4.4A DPAK STD5N52K3

Current at 25 ° C - continuous drain (Id)

4.4A(Tc)

Drain source voltage (Vdss)

525 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

Gate charge (Qg) at different Vgs (maximum)

17 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

545 pF @ 100 V

On resistance (maximum) for different Ids and Vgs

1.5 Ω @ 2.2A,10V

Power dissipation (maximum)

70W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

4.5V @ 50µA

packing

TR,CT

series

SuperMESH3™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

DPAK

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale