STP45N10F7 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

STP45N10F7

Description:

MOSFET N-CH 100V 45A TO220

Stock:

25065

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

Price：$0.38

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Parameters

Current at 25 ° C - continuous drain (Id)

45A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

25 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1640 pF @ 50 V

On resistance (maximum) for different Ids and Vgs

18 mΩ @ 22.5A,10V

Power dissipation (maximum)

60W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4.5V @ 250µA

packing

pipe

series

DeepGATE™, STripFET™ VII

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

TO-220

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

Download STP45N10F7.pdf

STP45N10F7（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25065,Price reference "real-time change" China/Hongkong。 STP45N10F7 package/specs, Download STP45N10F7、Datasheet。

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MOSFET N-CH 100V 45A TO220 STP45N10F7