MOSFET N-CH 30V 160A 10POWERSO STV160NF03LAT4

Current at 25 ° C - continuous drain (Id)

160A(Tc)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

5V,10V

FET Type

N channels

Gate charge (Qg) at different Vgs (maximum)

160 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

5350 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

3 mΩ @ 80A,10V

Power dissipation (maximum)

210W(Tc)

Vgs (max)

±15V

Vgs (th) (maximum) for different Ids

1V @ 250µA

packing

TR

series

STripFET™

technology

MOSFET(Metal oxide)

working temperature

175°C(TJ)

Encapsulation/Housing

10-PowerSO

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production