STL52N25M5 parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ STL52N25M5

The pictures are for reference only

Brand:

Model:

STL52N25M5

Description:

MOSFET N-CH 250V 28A POWERFLAT

Stock:

87200

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

RFQ

Email：online1@ssf-asia.com

Whatsapp：+8613510640449

WeChat：+86 19166251823

Telegram：+86 19166251823

Parameters

Current at 25 ° C - continuous drain (Id)

28A(Tc)

Drain source voltage (Vdss)

250 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

47 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1770 pF @ 50 V

On resistance (maximum) for different Ids and Vgs

65 mΩ @ 14A,10V

Power dissipation (maximum)

2.5W(Ta),110W(Tc)

Vgs (max)

±25V

Vgs (th) (maximum) for different Ids

5V @ 100µA

packing

TR,CT

series

MDmesh™ V

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

PowerFlat™(5x6)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

STL52N25M5（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory87200,Price reference "real-time change" China/Hongkong。 STL52N25M5 package/specs, Download STL52N25M5、Datasheet。

Please send RFQ , your dedicated sales manager will respond immediately.

Contact Name

Business Email

Quantity

Quick RFQ

ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg

News

M474A4G43MB1-CTD Samsung 32G DDR4 2666 ECC workstation memory 2022.09.06

Samsung came with news that there was a change in building a factory in the United States, and the US plan may be lost 2022.10.20

M393A4K40DB3-CWE Samsung DDR4 3200 32G Server Memory Stick RDIMM 2022.09.15

Calling Samsung Sony! SK Hynix has developed a 100-million-pixel image sensor 2022.10.08

M391A4G43MB1-CTD Samsung DDR4 2666 ECC 32GB server memory module 2022.09.02

M393A2K40CB2-CVF Samsung DDR4 RECC 16G 2022.09.06

M393A4G43AB3-CWE Samsung DDR4 3200 RECC 32G server memory module 2022.09.15

Expected 15%-20% decline in NAND Flash prices in the fourth quarter 2022.09.29

Texas Instruments' new Texas chip factory began mass production 2022.10.08

M393A2K40DB3-CWE Samsung 16G DDR4 3200 RECC server memory module 2022.09.07

Cancel

Confirm

Cookies

MOSFET N-CH 250V 28A POWERFLAT STL52N25M5