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    Home/    Category/    MOSFET/    STE139N65M5

    MOSFET N-CH 650V 130A ISOTOP STE139N65M5

    STE139N65M5 image
    The pictures are for reference only
    Brand:
    ST
    Model:
    STE139N65M5
    Description:
    MOSFET N-CH 650V 130A ISOTOP
    Stock:
    47761
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    130A(Tc)
  • Drain source voltage (Vdss)
    650 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    363 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    15600 pF @ 100 V
  • On resistance (maximum) for different Ids and Vgs
    17 mΩ @ 65A,10V
  • Power dissipation (maximum)
    672W(Tc)
  • Vgs (max)
    ±25V
  • Vgs (th) (maximum) for different Ids
    5V @ 250µA
  • packing
    pipe
  • series
    MDmesh™
  • technology
    MOSFET(Metal oxide)
  • working temperature
    150°C(TJ)
  • Encapsulation/Housing
    ISOTOP
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Base installation
  • Part status
    stop production
    • PDFicoDataSheet
    STE139N65M5（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory47761,Price reference "real-time change" China/Hongkong。 STE139N65M5 package/specs, Download STE139N65M5、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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