STH200N10WF7-2 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

STH200N10WF7-2

Description:

N-CHANNEL 100 V, 4.8 MOHM TYP.

Stock:

26910

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

Price：$1.32

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Parameters

Current at 25 ° C - continuous drain (Id)

180A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

93 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

4430 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

4 mΩ @ 90A,10V

Power dissipation (maximum)

340W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4.5V @ 250µA

packing

TR,CT

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

Download STH200N10WF7-2.pdf

STH200N10WF7-2（MOSFET）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26910,Price reference "real-time change" China/Hongkong。 STH200N10WF7-2 package/specs, Download STH200N10WF7-2、Datasheet。

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