NTMFS4C029NT1G parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ NTMFS4C029NT1G

The pictures are for reference only

Brand:

Model:

NTMFS4C029NT1G

Description:

MOSFET N-CH 30V 15A/46A 5DFN

Stock:

56292

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

RFQ

Email：online1@ssf-asia.com

Whatsapp：+8613510640449

WeChat：+86 19166251823

Telegram：+86 19166251823

Parameters

Current at 25 ° C - continuous drain (Id)

15A(Ta),46A(Tc)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

18.6 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

987 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

5.88 mΩ @ 30A,10V

Power dissipation (maximum)

2.49W(Ta),23.6W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.2V @ 250µA

packing

TR,CT

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

5-DFN(5x6)(8-SOFL)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

Download NTMFS4C029NT1G.pdf

NTMFS4C029NT1G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory56292,Price reference "real-time change" China/Hongkong。 NTMFS4C029NT1G package/specs, Download NTMFS4C029NT1G、Datasheet。

Please send RFQ , your dedicated sales manager will respond immediately.

Contact Name

Business Email

Quantity

Quick RFQ