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    Home/    Category/    MOSFET/    FDD5612

    MOSFET N-CH 60V 5.4A TO252-3 FDD5612

    FDD5612 image
    The pictures are for reference only
    Brand:
    ON
    Model:
    FDD5612
    Description:
    MOSFET N-CH 60V 5.4A TO252-3
    Stock:
    12025
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    5.4A(Ta)
  • Drain source voltage (Vdss)
    60 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    6V,10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    11 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    660 pF @ 30 V
  • On resistance (maximum) for different Ids and Vgs
    55 mΩ @ 5.4A,10V
  • Power dissipation (maximum)
    3.8W(Ta),42W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    3V @ 250µA
  • packing
    TR,CT
  • series
    PowerTrench®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 175°C(TJ)
  • Encapsulation/Housing
    TO-252AA
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    FDD5612（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12025,Price reference "real-time change" China/Hongkong。 FDD5612 package/specs, Download FDD5612、Datasheet。
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