NVTFS016N06CTAG parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NVTFS016N06CTAG

Description:

MOSFET N-CH 60V 8A/32A 8WDFN

Stock:

64879

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

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Parameters

Current at 25 ° C - continuous drain (Id)

8A(Ta),32A(Tc)

Drain source voltage (Vdss)

60 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

6.9 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

489 pF @ 30 V

On resistance (maximum) for different Ids and Vgs

16.3 mΩ @ 5A,10V

Power dissipation (maximum)

2.5W(Ta),36W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 25µA

packing

series

Automotive, AEC-Q101

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-WDFN(3.3x3.3)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

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NVTFS016N06CTAG（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64879,Price reference "real-time change" China/Hongkong。 NVTFS016N06CTAG package/specs, Download NVTFS016N06CTAG、Datasheet。

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