MOSFET N-CH 650V 20A TO220FP NTPF190N65S3HF

Current at 25 ° C - continuous drain (Id)

20A(Tc)

Drain source voltage (Vdss)

650 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

Gate charge (Qg) at different Vgs (maximum)

34 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

1610 pF @ 400 V

On resistance (maximum) for different Ids and Vgs

190 mΩ @ 10A,10V

Power dissipation (maximum)

36W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

5V @ 430µA

packing

pipe

series

FRFET®, SuperFET® III

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

TO-220FP

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale