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    Home/    Category/    MOSFET/    FQNL1N50BTA

    MOSFET N-CH 500V 270MA TO92-3 FQNL1N50BTA

    FQNL1N50BTA image
    The pictures are for reference only
    Brand:
    ON
    Model:
    FQNL1N50BTA
    Description:
    MOSFET N-CH 500V 270MA TO92-3
    Stock:
    43099
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    270mA(Tc)
  • Drain source voltage (Vdss)
    500 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    5.5 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    150 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    9 Ω @ 135mA,10V
  • Power dissipation (maximum)
    1.5W(Tc)
  • Vgs (max)
    ±30V
  • Vgs (th) (maximum) for different Ids
    3.7V @ 250µA
  • packing
    TB
  • series
    QFET®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    TO-92-3
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    stop production
    • PDFicoDataSheet
    FQNL1N50BTA（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory43099,Price reference "real-time change" China/Hongkong。 FQNL1N50BTA package/specs, Download FQNL1N50BTA、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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