MOSFET N-CH 500V 18A TO220-3 FQP18N50V2

Current at 25 ° C - continuous drain (Id)

18A(Tc)

Drain source voltage (Vdss)

500 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

Gate charge (Qg) at different Vgs (maximum)

55 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

3290 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

265 mΩ @ 9A,10V

Power dissipation (maximum)

208W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

5V @ 250µA

packing

pipe

series

QFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

TO-220-3

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

stop production