MOSFET N-CH 30V 5A/32A 8WDFN NTTFS4800NTWG

Current at 25 ° C - continuous drain (Id)

5A(Ta),32A(Tc)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,11.5V

FET Type

N channels

Gate charge (Qg) at different Vgs (maximum)

16.6 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

964 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

20 mΩ @ 20A,10V

Power dissipation (maximum)

860mW(Ta),33.8W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

3V @ 250µA

packing

TR

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-WDFN(3.3x3.3)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production