MOSFET N-CH 100V 58A D2PAK-3 NVB6412ANT4G

Current at 25 ° C - continuous drain (Id)

58A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

Gate charge (Qg) at different Vgs (maximum)

100 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

3500 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

18.2 mΩ @ 58A,10V

Power dissipation (maximum)

167W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 250µA

packing

TR

series

Automotive, AEC-Q101

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

D²PAK

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production