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    Home/    Category/    MOSFET/    FQD9N25TM-SBEK002

    LDO REGULATOR, ULTRA-LOW NOISE FQD9N25TM-SBEK002

    FQD9N25TM-SBEK002 image
    The pictures are for reference only
    Brand:
    ON
    Model:
    FQD9N25TM-SBEK002
    Description:
    LDO REGULATOR, ULTRA-LOW NOISE
    Stock:
    6999
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    7.4A(Tc)
  • Drain source voltage (Vdss)
    250 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    20 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    700 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    420 mΩ @ 3.7A,10V
  • Power dissipation (maximum)
    2.5W(Ta),55W(Tc)
  • Vgs (max)
    ±30V
  • Vgs (th) (maximum) for different Ids
    5V @ 250µA
  • packing
    TR
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    -
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    FQD9N25TM-SBEK002（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory6999,Price reference "real-time change" China/Hongkong。 FQD9N25TM-SBEK002 package/specs, Download FQD9N25TM-SBEK002、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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