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    Home/    Category/    MOSFET/    DMT6015LFV-13

    MOSFET N-CH 60V PWRDI3333 DMT6015LFV-13

    DMT6015LFV-13 image
    The pictures are for reference only
    Brand:
    Diodes
    Model:
    DMT6015LFV-13
    Description:
    MOSFET N-CH 60V PWRDI3333
    Stock:
    54848
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    Price：$0.04
    The market price fluctuates. Please consult the customer service for the actual price
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    9.5A(Ta),35A(Tc)
  • Drain source voltage (Vdss)
    60 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    4.5V,10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    18.9 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    1103 pF @ 30 V
  • On resistance (maximum) for different Ids and Vgs
    16 mΩ @ 10A,10V
  • Power dissipation (maximum)
    2.2W(Ta),30W(Tc)
  • Vgs (max)
    ±16V
  • Vgs (th) (maximum) for different Ids
    2.5V @ 250µA
  • packing
    TR
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    PowerDI3333-8(UX class )
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    DMT6015LFV-13（MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory54848,Price reference "real-time change" China/Hongkong。 DMT6015LFV-13 package/specs, Download DMT6015LFV-13、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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