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    Home/    Category/    MOSFET/    DMT6012LFV-7

    MOSFET N-CH 60V 43.3A PWRDI3333 DMT6012LFV-7

    DMT6012LFV-7 image
    The pictures are for reference only
    Brand:
    Diodes
    Model:
    DMT6012LFV-7
    Description:
    MOSFET N-CH 60V 43.3A PWRDI3333
    Stock:
    50971
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    Price：$0.05
    The market price fluctuates. Please consult the customer service for the actual price
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    43.3A(Tc)
  • Drain source voltage (Vdss)
    60 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    4.5V,10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    22.2 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    1522 pF @ 30 V
  • On resistance (maximum) for different Ids and Vgs
    12 mΩ @ 20A,10V
  • Power dissipation (maximum)
    1.95W(Ta),33.78W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    2.5V @ 250µA
  • packing
    TR
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    PowerDI3333-8(UX class )
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    DMT6012LFV-7（MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory50971,Price reference "real-time change" China/Hongkong。 DMT6012LFV-7 package/specs, Download DMT6012LFV-7、Datasheet。
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