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    Home/    Category/    MOSFET/    BSS138-7

    MOSFET N-CH 50V 200MA SOT23-3 BSS138-7

    BSS138-7 image
    The pictures are for reference only
    Brand:
    Diodes
    Model:
    BSS138-7
    Description:
    MOSFET N-CH 50V 200MA SOT23-3
    Stock:
    55952
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    200mA(Ta)
  • Drain source voltage (Vdss)
    50 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    -
  • Input capacitance at different Vds (Ciss) (maximum)
    50 pF @ 10 V
  • On resistance (maximum) for different Ids and Vgs
    3.5 Ω @ 220mA,10V
  • Power dissipation (maximum)
    300mW(Ta)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    1.5V @ 250µA
  • packing
    TR,CT
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    SOT-23-3
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    BSS138-7（MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory55952,Price reference "real-time change" China/Hongkong。 BSS138-7 package/specs, Download BSS138-7、Datasheet。
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