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    Home/    Category/    MOSFET/    TPH4R008NH,L1Q

    MOSFET N-CH 80V 60A 8SOP TPH4R008NH,L1Q

    TPH4R008NH,L1Q image
    The pictures are for reference only
    Brand:
    Toshiba
    Model:
    TPH4R008NH,L1Q
    Description:
    MOSFET N-CH 80V 60A 8SOP
    Stock:
    50205
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    Price：$0.54
    The market price fluctuates. Please consult the customer service for the actual price
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    60A(Tc)
  • Drain source voltage (Vdss)
    80 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    59 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    5300 pF @ 40 V
  • On resistance (maximum) for different Ids and Vgs
    4 mΩ @ 30A,10V
  • Power dissipation (maximum)
    1.6W(Ta),78W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    4V @ 1mA
  • packing
    TR,CT
  • series
    U-MOSVIII-H
  • technology
    MOSFET(Metal oxide)
  • working temperature
    150°C(TJ)
  • Encapsulation/Housing
    8-SOP Advance(5x5)
  • Country of origin
    Japan
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    TPH4R008NH,L1Q（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory50205,Price reference "real-time change" China/Hongkong。 TPH4R008NH,L1Q package/specs, Download TPH4R008NH,L1Q、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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