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    Home/    Category/    MOSFET/    HN4K03JUTE85LF

    MOSFET N-CH 20V 100MA USV HN4K03JUTE85LF

    HN4K03JUTE85LF image
    The pictures are for reference only
    Brand:
    Toshiba
    Model:
    HN4K03JUTE85LF
    Description:
    MOSFET N-CH 20V 100MA USV
    Stock:
    33942
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    100mA(Ta)
  • Drain source voltage (Vdss)
    20 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    2.5V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    -
  • Input capacitance at different Vds (Ciss) (maximum)
    8.5 pF @ 3 V
  • On resistance (maximum) for different Ids and Vgs
    12Ω @ 10mA,2.5V
  • Power dissipation (maximum)
    200mW(Ta)
  • Vgs (max)
    10V
  • Vgs (th) (maximum) for different Ids
    -
  • packing
    TR,CT
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    150°C(TJ)
  • Encapsulation/Housing
    5-SSOP
  • Country of origin
    Japan
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    HN4K03JUTE85LF（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory33942,Price reference "real-time change" China/Hongkong。 HN4K03JUTE85LF package/specs, Download HN4K03JUTE85LF、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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