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    Home/    Category/    MOSFET/    TPCC8104,L1Q

    MOSFET P-CH 30V 20A 8TSON TPCC8104,L1Q

    TPCC8104,L1Q image
    The pictures are for reference only
    Brand:
    Toshiba
    Model:
    TPCC8104,L1Q
    Description:
    MOSFET P-CH 30V 20A 8TSON
    Stock:
    22277
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    RFQ
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    20A(Ta)
  • Drain source voltage (Vdss)
    30 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    4.5V,10V
  • FET Type
    P channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    58 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    2260 pF @ 10 V
  • On resistance (maximum) for different Ids and Vgs
    8.8 mΩ @ 10A,10V
  • Power dissipation (maximum)
    700mW(Ta),27W(Tc)
  • Vgs (max)
    +20V,-25V
  • Vgs (th) (maximum) for different Ids
    2V @ 500µA
  • packing
    TR
  • series
    U-MOSVI
  • technology
    MOSFET(Metal oxide)
  • working temperature
    150°C
  • Encapsulation/Housing
    8-TSON Advance(3.1x3.1)
  • Country of origin
    Japan
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    TPCC8104,L1Q（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory22277,Price reference "real-time change" China/Hongkong。 TPCC8104,L1Q package/specs, Download TPCC8104,L1Q、Datasheet。
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