IRFH5210TRPBF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IRFH5210TRPBF

Description:

MOSFET N-CH 100V 10A/55A 8PQFN

Stock:

20576

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

Price：$0.35

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Parameters

Current at 25 ° C - continuous drain (Id)

10A(Ta),55A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

59 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

2570 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

14.9 mΩ @ 33A,10V

Power dissipation (maximum)

3.6W(Ta),104W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 100µA

packing

TR,CT

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-PQFN(5x6)

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

Download IRFH5210TRPBF.pdf

IRFH5210TRPBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20576,Price reference "real-time change" China/Hongkong。 IRFH5210TRPBF package/specs, Download IRFH5210TRPBF、Datasheet。

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