MOSFET N-CH 20V 61A TO220AB IRL3102PBF

Current at 25 ° C - continuous drain (Id)

61A(Tc)

Drain source voltage (Vdss)

20 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,7V

FET Type

N channels

Gate charge (Qg) at different Vgs (maximum)

58 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

2500 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

13 mΩ @ 37A,7V

Power dissipation (maximum)

89W(Tc)

Vgs (max)

±10V

Vgs (th) (maximum) for different Ids

700mV @ 250µA

packing

pipe

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

TO-220AB

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

stop production