BUZ73A parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

BUZ73A

Description:

MOSFET N-CH 200V 5.5A TO220-3

Stock:

35257

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

Price：$0.06

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Parameters

Current at 25 ° C - continuous drain (Id)

5.5A(Tc)

Drain source voltage (Vdss)

200 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

530 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

600 mΩ @ 4.5A,10V

Power dissipation (maximum)

40W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 1mA

packing

pipe

series

SIPMOS®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

PG-TO220-3

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

stop production

DataSheet

BUZ73A（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory35257,Price reference "real-time change" China/Hongkong。 BUZ73A package/specs, Download BUZ73A、Datasheet。

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MOSFET N-CH 200V 5.5A TO220-3 BUZ73A