IPI120P04P404AKSA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPI120P04P404AKSA1

Description:

MOSFET P-CH 40V 120A TO262-3

Stock:

55316

Type:

goods in stock

Store:

Hong kong

DataSheet:

ECAD Model:

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Parameters

Current at 25 ° C - continuous drain (Id)

120A(Tc)

Drain source voltage (Vdss)

40 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

P channels

FET function

Gate charge (Qg) at different Vgs (maximum)

205 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

14790 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

3.8 mΩ @ 100A,10V

Power dissipation (maximum)

136W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 340µA

packing

pipe

series

Automotive, AEC-Q101, OptiMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

PG-TO262-3-1

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

stop production

DataSheet

IPI120P04P404AKSA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory55316,Price reference "real-time change" China/Hongkong。 IPI120P04P404AKSA1 package/specs, Download IPI120P04P404AKSA1、Datasheet。

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