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    Home/    Category/    MOSFET/    IPP80P04P4L08AKSA1

    MOSFET P-CH 40V 80A TO220-3 IPP80P04P4L08AKSA1

    IPP80P04P4L08AKSA1 image
    The pictures are for reference only
    Brand:
    Infineon
    Model:
    IPP80P04P4L08AKSA1
    Description:
    MOSFET P-CH 40V 80A TO220-3
    Stock:
    72372
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    ECAD Model:
    Price：$0.09
    The market price fluctuates. Please consult the customer service for the actual price
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    80A(Tc)
  • Drain source voltage (Vdss)
    40 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    4.5V,10V
  • FET Type
    P channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    92 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    5430 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    8.2 mΩ @ 80A,10V
  • Power dissipation (maximum)
    75W(Tc)
  • Vgs (max)
    +5V,-16V
  • Vgs (th) (maximum) for different Ids
    2.2V @ 120µA
  • packing
    bulk,pipe
  • series
    Automotive, AEC-Q101, OptiMOS™
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 175°C(TJ)
  • Encapsulation/Housing
    PG-TO220-3-1
  • Country of origin
    Germany
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    stop production
    • PDFicoDataSheet
    IPP80P04P4L08AKSA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory72372,Price reference "real-time change" China/Hongkong。 IPP80P04P4L08AKSA1 package/specs, Download IPP80P04P4L08AKSA1、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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