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    Home/    Category/    DDR/    MT46V64M4FG-75:G TR

    IC DRAM 256MBIT PARALLEL 60FBGA MT46V64M4FG-75:G TR

    MT46V64M4FG-75:G TR image
    The pictures are for reference only
    Brand:
    Micron
    Model:
    MT46V64M4FG-75:G TR
    Description:
    IC DRAM 256MBIT PARALLEL 60FBGA
    Stock:
    18367
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    RFQ
    Contact UsContact Us
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    产品参数icoParameters
  • Access time
    15ns
  • Access time
    750 ps
  • Clock frequency
    133 MHz
  • Current - maximum
    -
  • Flash architecture
    -
  • Memory format
    DRAM
  • Memory interface
    12Gb(384M x 32)
  • Memory type
    Volatile
  • Random read
    -
  • Voltage - Supply
    2.3V ~ 2.7V
  • packing
    TR
  • series
    -
  • storage capacity
    256Mb(64M x 4)
  • technology
    SDRAM - DDR
  • working temperature
    0°C ~ 70°C(TA)
  • Encapsulation/Housing
    60-FBGA
  • Country of origin
    China/USA/Japan, etc
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
  • -
    • PDFicoDataSheet
    MT46V64M4FG-75:G TR（DDR）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18367,Price reference "real-time change" China/Hongkong。 MT46V64M4FG-75:G TR package/specs, Download MT46V64M4FG-75:G TR、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
    Quick RFQ
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    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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    SK Hynix successfully developed 238 layers of NAND flash memory 2022.09.08
    M393A4G43AB3-CWE Samsung DDR4 3200 RECC 32G server memory module 2022.09.15
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    Read the naming rules of memory sticks Samsung M378A1K43CB2-CTD 2022.09.02
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    M393A4K40CB2-CVF Samsung DDR4 2933 32GB server memory 2022.09.09
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