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    Home/    Category/    NAND FLASH/    MT29C1G12MAADAFAKD-6 E IT

    IC FLASH RAM 1GBIT PAR 137TFBGA MT29C1G12MAADAFAKD-6 E IT

    MT29C1G12MAADAFAKD-6 E IT image
    The pictures are for reference only
    Brand:
    Micron
    Model:
    MT29C1G12MAADAFAKD-6 E IT
    Description:
    IC FLASH RAM 1GBIT PAR 137TFBGA
    Stock:
    13737
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    RFQ
    Contact UsContact Us
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    产品参数icoParameters
  • Access time
    -
  • Clock frequency
    166 MHz
  • Memory format
    FLASH,RAM
  • Memory interface
    Paralleling
  • Memory type
    nonvolatile
  • Voltage - Supply
    1.7V ~ 1.95V
  • packing
    bulk
  • series
    -
  • storage capacity
    1Gb(128M x 8)(NAND),1Gb(32M x 32)(LPDRAM)
  • working temperature
    -40°C ~ 85°C(TA)
  • Encapsulation/Housing
    137-TFBGA
  • Country of origin
    China/USA/Japan, etc
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
  • Write cycle time - words, pages
    -
    • PDFicoDataSheet
    MT29C1G12MAADAFAKD-6 E IT（NAND FLASH）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13737,Price reference "real-time change" China/Hongkong。 MT29C1G12MAADAFAKD-6 E IT package/specs, Download MT29C1G12MAADAFAKD-6 E IT、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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    he vice chairman of the flash memory famous company Kioxia warned of "decoupling" from China: the cost is high! 2022.10.31
    M391A4G43BB1-CWE Samsung DDR4 3200 32G server module 2022.09.02
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    DRAM is severely oversupplied and is not expected to stop until the third quarter of 2023 2022.09.29
    HMA84GR7DJR4N-XN Hynix DDR4 3200 32G server memory module 2022.09.15
    M393A4G43AB3-CWE Samsung DDR4 3200 RECC 32G server memory module 2022.09.15
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