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    Home/    Category/    RLDRAM/    MT44K16M36RB-125E:A

    IC DRAM 576MBIT PARALLEL 168BGA MT44K16M36RB-125E:A

    MT44K16M36RB-125E:A image
    The pictures are for reference only
    Brand:
    Micron
    Model:
    MT44K16M36RB-125E:A
    Description:
    IC DRAM 576MBIT PARALLEL 168BGA
    Stock:
    19742
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    RFQ
    Contact UsContact Us
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    产品参数icoParameters
  • Access time
    -
  • Access time
    10 ns
  • Clock frequency
    800 MHz
  • Current - maximum
    -
  • Flash architecture
    -
  • Memory format
    DRAM
  • Memory interface
    Paralleling
  • Memory type
    Volatile
  • Random read
    -
  • Voltage - Supply
    1.28V ~ 1.42V
  • packing
    pallet
  • series
    -
  • storage capacity
    576Mb(16M x 36)
  • technology
    RLDRAM 3
  • working temperature
    0°C ~ 95°C(TC)
  • Encapsulation/Housing
    168-TBGA
  • Country of origin
    China/USA/Japan, etc
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
  • -
    • PDFicoDataSheet
    MT44K16M36RB-125E:A（RLDRAM）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19742,Price reference "real-time change" China/Hongkong。 MT44K16M36RB-125E:A package/specs, Download MT44K16M36RB-125E:A、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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    M391A4G43MB1-CTD Samsung DDR4 2666 ECC 32GB server memory module 2022.09.02
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    M391A2K43BB1-CTD Samsung DDR4 2666 ECC 16G server memory module 2022.09.01
    M393A2K40CB2-CVF Samsung DDR4 RECC 16G 2022.09.06
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