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    Home/    Category/    SDRAM/    IS42SM32160E-6BLI

    IC DRAM 512MBIT PARALLEL 90TFBGA IS42SM32160E-6BLI

    IS42SM32160E-6BLI image
    The pictures are for reference only
    Brand:
    ISSI
    Model:
    IS42SM32160E-6BLI
    Description:
    IC DRAM 512MBIT PARALLEL 90TFBGA
    Stock:
    10015
    Type:
    goods in stock
    Store:
    Hong kong
    DataSheet:
    RFQ
    Contact UsContact Us
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    产品参数icoParameters
  • Access time
    5.5 ns
  • Clock frequency
    166 MHz
  • Memory format
    DRAM
  • Memory interface
    Paralleling
  • Memory type
    Volatile
  • Voltage - Supply
    3V ~ 3.6V
  • Write cycle time - words, pages
    -
  • packing
    pallet
  • series
    -
  • storage capacity
    512Mb(16M x 32)
  • working temperature
    -40°C ~ 85°C(TA)
  • Encapsulation/Housing
    90-TFBGA
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
    • PDFicoDataSheet
    IS42SM32160E-6BLI（SDRAM）ByISSIDesign and production, ICQQG Electronic component purchase website provides sufficient inventory10015,Price reference "real-time change" China/Hongkong。 IS42SM32160E-6BLI package/specs, Download IS42SM32160E-6BLI、Datasheet。
    Please send RFQ , your dedicated sales manager will respond immediately.
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