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K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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Home /    Category /    DDR2
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Brand:
Samsung Micron Skhynix Winbond nanya ELPIDA Etron ISSI ProMOS Alliance Memory Zentel
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Memory format:
DRAM
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Installation type:
Surface mount
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packing:
pipe pallet TR box TR,CT CT bulk
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Memory type:
Volatile
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storage capacity :
512MB 1GB 256Mb 512Mb 1Gb 128Mb 2Gb 512 Mbit 2 Gbit 1 Gbit 256 Mbit 4 Gbit 1Gb(256M x 4) 256Mb(16M x 16) 256Mb(32M x 8) 256Mb(64M x 4) 512Mb(32M x 16) 512Mb(64M x 8) 512Mb(128M x 4) 1Gb(64M x 16) 1Gb(128M x 8) 2Gb(128M x 16) 2Gb(256M x 8) 2Gb(512M x 4) 4Gb(512M x 8) 4Gb(1G x 4)
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Voltage - Supply:
1.55V ~ 1.9V 1.7V ~ 1.9V
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working temperature :
-40°C ~ 85°C(TA) -40°C ~ 95°C(TC) -40°C ~ 105°C(TA) -40°C ~ 105°C(TC) -40°C ~ 125°C(TC) 0°C ~ 85°C(TC) 0°C ~ 70°C(TA) 0°C ~ 95°C(TC) -40°C ~ 85°C(TC) -25°C ~ 85°C(TC)
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Clock frequency:
266 MHz 200 MHz 267 MHz 333 MHz 400 MHz 533 MHz
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Access time:
600 ps 500 ps 450 ns 400 ns - 350 ps 400 ps 450 ps
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choosed:
  • Winbond
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    • Total：314
    Photo
    Mfr.Part #
    Brand
    Description
    DataSheet
    Pricing(USD)
    Qty
    W979H2KBVX1I TR
    W979H2KBVX1I TR
    Winbond
    512MB LPDDR2, X32, 533MHZ, -40 ~
    Datasheet
    Call
    RFQ
    W979H2KBVX2I TR
    W979H2KBVX2I TR
    Winbond
    512MB LPDDR2, X32, 400MHZ, -40 ~
    Datasheet
    Call
    RFQ
    W979H2KBVX2E TR
    W979H2KBVX2E TR
    Winbond
    512MB LPDDR2, X32, 400MHZ, -25 ~
    Datasheet
    Call
    RFQ
    W979H6KBVX1E TR
    W979H6KBVX1E TR
    Winbond
    512MB LPDDR2, X16, 533MHZ T&R
    Datasheet
    Call
    RFQ
    W979H2KBVX1E TR
    W979H2KBVX1E TR
    Winbond
    512MB LPDDR2, X32, 533MHZ, -25 ~
    Datasheet
    Call
    RFQ
    W979H6KBVX1I TR
    W979H6KBVX1I TR
    Winbond
    512MB LPDDR2, X16, 533MHZ, -40 ~
    Datasheet
    Call
    RFQ
    W979H6KBVX2I TR
    W979H6KBVX2I TR
    Winbond
    IC DRAM 512MBIT PAR 134VFBGA
    Datasheet
    Call
    RFQ
    W979H6KBVX2E TR
    W979H6KBVX2E TR
    Winbond
    IC DRAM 512MBIT PAR 134VFBGA
    Datasheet
    Call
    RFQ
    W97AH6NBVA1I TR
    W97AH6NBVA1I TR
    Winbond
    1GB LPDDR2, X16, 533MHZ, -40 ~ 8
    Datasheet
    Call
    RFQ
    W97AH2NBVA1I TR
    W97AH2NBVA1I TR
    Winbond
    1GB LPDDR2, X32, 533MHZ, -40 ~ 8
    Datasheet
    Call
    RFQ
    W97AH2NBVA2I TR
    W97AH2NBVA2I TR
    Winbond
    1GB LPDDR2, X32, 400MHZ, -40 ~ 8
    Datasheet
    Call
    RFQ
    W97AH6NBVA2I TR
    W97AH6NBVA2I TR
    Winbond
    1GB LPDDR2, X16, 400MHZ, -40 ~ 8
    Datasheet
    Call
    RFQ
    W97AH2NBVA1E TR
    W97AH2NBVA1E TR
    Winbond
    1GB LPDDR2, X32, 533MHZ, -25 ~ 8
    Datasheet
    Call
    RFQ
    W97AH6NBVA1E TR
    W97AH6NBVA1E TR
    Winbond
    1GB LPDDR2, X16, 533MHZ, -25 ~ 8
    Datasheet
    Call
    RFQ
    W97AH2NBVA2E TR
    W97AH2NBVA2E TR
    Winbond
    1GB LPDDR2, X32, 400MHZ, -25 ~ 8
    Datasheet
    Call
    RFQ
    W97AH6NBVA2E TR
    W97AH6NBVA2E TR
    Winbond
    1GB LPDDR2, X16, 400MHZ, -25 ~ 8
    Datasheet
    Call
    RFQ
    W97AH6KBVX2I TR
    W97AH6KBVX2I TR
    Winbond
    IC DRAM 1GBIT PARALLEL 134VFBGA
    Datasheet
    Call
    RFQ
    W97AH6KBVX2E TR
    W97AH6KBVX2E TR
    Winbond
    IC DRAM 1GBIT PARALLEL 134VFBGA
    Datasheet
    Call
    RFQ
    W978H2KBVX1I TR
    W978H2KBVX1I TR
    Winbond
    256MB LPDDR2, X32, 533MHZ, -40 ~
    Datasheet
    Call
    RFQ
    W978H6KBVX1E TR
    W978H6KBVX1E TR
    Winbond
    256MB LPDDR2, X16, 533MHZ, -25 ~
    Datasheet
    Call
    RFQ
    X
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