Installation type | Surface mount |
packing | TR,CT |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 6-UDFN Exposed Pad |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 700mW |
FET Type | 2 N Channel(two)Co leakage |
Drain source voltage (Vdss) | 24V |
Current at 25 ° C - continuous drain (Id) | 11A |
On resistance (maximum) for different Ids and Vgs | 7 mΩ @ 5.5A,4.5V |
Vgs (th) (maximum) for different Ids | 1.5V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 33.2nC @ 4.5V |
Input capacitance at different Vds (Ciss) (maximum) | 2665pF @ 10V |
FET function | standard |