| Installation type | Base installation | 
| packing | pipe | 
| series | POWER MOS V® | 
| Part status | On sale | 
| Encapsulation/Housing | ISOTOP® | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | MOSFET(Metal oxide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 500 V | 
| Current at 25 ° C - continuous drain (Id) | 50A(Tc) | 
| On resistance (maximum) for different Ids and Vgs | 85 mΩ @ 500mA,10V | 
| Vgs (th) (maximum) for different Ids | 4V @ 1mA | 
| Gate charge (Qg) at different Vgs (maximum) | 535 nC @ 10 V | 
| Input capacitance at different Vds (Ciss) (maximum) | 10800 pF @ 25 V |