| Installation type | Base installation |
| packing | bulk |
| series | CoolMOS™ |
| Part status | stop production |
| working temperature | -40°C ~ 150°C(TJ) |
| Encapsulation/Housing | SP1 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 900 V |
| Current at 25 ° C - continuous drain (Id) | 59A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 60 mΩ @ 52A,10V |
| Vgs (th) (maximum) for different Ids | 3.5V @ 6mA |
| Gate charge (Qg) at different Vgs (maximum) | 540 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 13600 pF @ 100 V |
| FET function | Grade knot |
| Power dissipation (maximum) | 462W(Tc) |