APTC90SKM60CT1G
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APTC90SKM60CT1G
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APTC90SKM60CT1G

Brand:Microchip
Model:APTC90SKM60CT1G
stock:53120
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Base installation
packing bulk
series CoolMOS™
Part status stop production
working temperature -40°C ~ 150°C(TJ)
Encapsulation/Housing SP1
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 900 V
Current at 25 ° C - continuous drain (Id) 59A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 60 mΩ @ 52A,10V
Vgs (th) (maximum) for different Ids 3.5V @ 6mA
Gate charge (Qg) at different Vgs (maximum) 540 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 13600 pF @ 100 V
FET function Grade knot
Power dissipation (maximum) 462W(Tc)
Common problem
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