STD4N62K3
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STD4N62K3
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STD4N62K3

Brand:ST
Model:STD4N62K3
stock:39142
Store:ShenZhen/Hongkong
Price:1+
$0.37
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series SuperMESH3™
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing DPAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 620 V
Current at 25 ° C - continuous drain (Id) 3.8A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 1.95 Ω @ 1.9A,10V
Vgs (th) (maximum) for different Ids 4.5V @ 50µA
Gate charge (Qg) at different Vgs (maximum) 14 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 450 pF @ 50 V
Power dissipation (maximum) 70W(Tc)
Common problem
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