STH13N120K5-2AG
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STH13N120K5-2AG
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STH13N120K5-2AG

Brand:ST
Model:STH13N120K5-2AG
stock:84691
Store:ShenZhen/Hongkong
Price:1+
$2.05
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product details
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Installation type Surface mount
packing TR,CT
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing H2Pak-2
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 1200 V
Current at 25 ° C - continuous drain (Id) 12A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 690 mΩ @ 6A,10V
Vgs (th) (maximum) for different Ids 5V @ 100µA
Gate charge (Qg) at different Vgs (maximum) 44.2 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 1370 pF @ 100 V
Power dissipation (maximum) 250W(Tc)
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