| Installation type | Surface mount | 
| packing | TR,CT | 
| Part status | On sale | 
| working temperature | -55°C ~ 175°C(TJ) | 
| Encapsulation/Housing | D2PAK-7 | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | SiCFET(silicon carbide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 650 V | 
| Current at 25 ° C - continuous drain (Id) | 62A(Tc) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 15V,18V | 
| On resistance (maximum) for different Ids and Vgs | 50 mΩ @ 25A,18V | 
| Vgs (th) (maximum) for different Ids | 4.3V @ 8mA | 
| Gate charge (Qg) at different Vgs (maximum) | 105 nC @ 18 V | 
| Vgs (max) | +22V,-8V | 
| Input capacitance at different Vds (Ciss) (maximum) | 1890 pF @ 325 V | 
| Power dissipation (maximum) | 242W(Tc) |