| Installation type | Surface mount |
| packing | TR,CT |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | D2PAK-7 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiCFET(silicon carbide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 650 V |
| Current at 25 ° C - continuous drain (Id) | 62A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 15V,18V |
| On resistance (maximum) for different Ids and Vgs | 50 mΩ @ 25A,18V |
| Vgs (th) (maximum) for different Ids | 4.3V @ 8mA |
| Gate charge (Qg) at different Vgs (maximum) | 105 nC @ 18 V |
| Vgs (max) | +22V,-8V |
| Input capacitance at different Vds (Ciss) (maximum) | 1890 pF @ 325 V |
| Power dissipation (maximum) | 242W(Tc) |