FCP190N65S3
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FCP190N65S3
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FCP190N65S3

Brand:ON
Model:FCP190N65S3
stock:16614
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Common problem
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Installation type Through-Hole
packing pipe
series SuperFET® III
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-220-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 17A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 190 mΩ @ 8.5A,10V
Vgs (th) (maximum) for different Ids 4.5V @ 1.7mA
Gate charge (Qg) at different Vgs (maximum) 33 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 1350 pF @ 400 V
Power dissipation (maximum) 144W(Tc)
Common problem
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