NTRV4101PT1G
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NTRV4101PT1G
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NTRV4101PT1G

Brand:ON
Model:NTRV4101PT1G
stock:17750
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT,bulk
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SOT-23-3(TO-236)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 1.8A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.8V,4.5V
On resistance (maximum) for different Ids and Vgs 85 mΩ @ 1.6A,4.5V
Vgs (th) (maximum) for different Ids 1.2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 8.5 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 675 pF @ 10 V
Power dissipation (maximum) 420mW(Ta)
Common problem
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