NVH4L022N120M3S
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NVH4L022N120M3S
Brand：ON
Model：NVH4L022N120M3S
stock：75021
Store：ShenZhen/Hongkong
Price:
The market price fluctuates. Please consult the customer service for the actual price
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| Installation type | Through-Hole |
| packing | pipe |
| series | Automotive, AEC-Q101 |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | TO-247-4L |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiCFET(silicon carbide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 1200 V |
| Current at 25 ° C - continuous drain (Id) | 68A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 18V |
| On resistance (maximum) for different Ids and Vgs | 30 mΩ @ 40A, 18V |
| Vgs (th) (maximum) for different Ids | 4.4V @ 20mA |
| Gate charge (Qg) at different Vgs (maximum) | 151 nC @ 18 V |
| Vgs (max) | +22V,-10V |
| Input capacitance at different Vds (Ciss) (maximum) | 3175 pF @ 800 V |
| Power dissipation (maximum) | 352W(Tc) |
Common problem
Industry trends
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