| Installation type | Through-Hole |
| packing | pipe |
| Part status | stop production |
| working temperature | -65°C ~ 175°C(TJ) |
| Encapsulation/Housing | TO-220-3 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 30 V |
| Current at 25 ° C - continuous drain (Id) | 30A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 25 mΩ @ 19A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 36 nC @ 5 V |
| Vgs (max) | ±16V |
| Input capacitance at different Vds (Ciss) (maximum) | 1570 pF @ 15 V |
| Power dissipation (maximum) | 75W(Tc) |