2N7000G
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2N7000G
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2N7000G

Brand:ON
Model:2N7000G
stock:68771
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Through-Hole
packing bulk
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing TO-92(TO-226)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 200mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 5 Ω @ 500mA,10V
Vgs (th) (maximum) for different Ids 3V @ 1mA
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 60 pF @ 25 V
Power dissipation (maximum) 350mW(Tc)
Common problem
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