NTD60N02R
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NTD60N02R
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NTD60N02R

Brand:ON
Model:NTD60N02R
stock:11018
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing pipe
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing DPAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 25 V
Current at 25 ° C - continuous drain (Id) 8.5A(Ta),32A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 10.5 mΩ @ 20A,10V
Vgs (th) (maximum) for different Ids 2V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 14 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1330 pF @ 20 V
Power dissipation (maximum) 1.25W(Ta),58W(Tc)
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