MTD3055V
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MTD3055V
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MTD3055V

Brand:ON
Model:MTD3055V
stock:67553
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing TO-252AA
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 12A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 150 mΩ @ 6A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 17 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 500 pF @ 25 V
Power dissipation (maximum) 3.9W(Ta),48W(Tc)
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