NVMSD6N303R2G
Home
Category
MOSFET
NVMSD6N303R2G
The pictures are for reference only

NVMSD6N303R2G

Brand:ON
Model:NVMSD6N303R2G
stock:99389
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,bulk
series Automotive, AEC-Q101
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-SOIC
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 6A(Ta)
On resistance (maximum) for different Ids and Vgs 32 mΩ @ 6A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 30 nC @ 10 V
Input capacitance at different Vds (Ciss) (maximum) 950 pF @ 24 V
FET function Schottky diode (isolated)
Common problem
RFQ
WhatsApp
Click the button below to copy the Skype
Click the button below to copy the Wechat
Click the button below to copy the Whatsapp
Click the button below to copy the Line
RFQ
We will reply to you through your email address as soon as we receive your RFQ
Cookies Notification